Excitonic effects on the silicon plasmon resonance

被引：94

作者：

Olevano, V ^{[1
]}

Reining, L

机构：

[1] Ecole Polytech, CEA, CNRS, Solides Irradies Lab, F-91128 Palaiseau, France

[2] Univ Roma Tor Vergata, Dipartimento Fis, INFM, I-00133 Rome, Italy

来源：

PHYSICAL REVIEW LETTERS | 2001年 / 86卷 / 26期

关键词：

D O I：

10.1103/PhysRevLett.86.5962

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We present an ab initio calculation of the electron energy loss spectrum of silicon including local-field, self-energy, and excitonic effects. When self-energy corrections are added to the standard random phase approximation (RPA) the line shape of the plasmon resonance worsens. The electron-hole interaction cancels this correction and improves the result both compared to the RPA and to the self-energy one, yielding very good agreement between theory and experiment provided that the mixing of interband transitions of both positive and negative frequencies is included.

引用

页码：5962 / 5965

页数：4

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