Latent track formation in germanium irradiated with 20, 30 and 40 MeV fullerenes in the electronic regime

被引:47
作者
Colder, A
Marty, O
Canut, B
Levalois, M
Marie, P
Portier, X
Ramos, SMM
Toulemonde, M
机构
[1] ISMRA, LERMAT, FRE CNRS 2149, F-14050 Caen, France
[2] Univ Lyon 1, LENAC, JE CNRS 2266, F-69622 Villeurbanne, France
[3] Univ Lyon 1, DPM, UMR CNRS 5586, F-69622 Villeurbanne, France
[4] CIRIL, UMR CNRS 6637, F-14070 Caen 5, France
关键词
germanium; track fullerene; irradiation; microscopy;
D O I
10.1016/S0168-583X(01)00314-7
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
Conventional transmission electron microscopy (TEM) and high resolution electron microscopy (HREM) have been performed on irradiated germanium with a few tens of MeV C-60 incident clusters (fullerenes), Normal and inclined incidences of the beam have been investigated. As observed in the case of silicon, microscopy observations after irradiation with 20, 30 and 40 MeV beams show clearly the presence of cylindrical amorphous latent tracks of 6, 10.6 and 12.5 nm in diameter, respectively. Other microstructural considerations are reported. The difference in diameter has been interpreted in terms of high electronic energy deposited by the three different energetic fullerene beams. Furthermore, during HREM observation, a recrystallisation process of the amorphous region of the tracks has been observed and analysed. (C) 2001 Elsevier Science B.V, All rights reserved.
引用
收藏
页码:491 / 498
页数:8
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