Ion-beam mixing induced by atomic and cluster bombardment in the electronic stopping-power regime

Single crystals of magnesium oxide containing nanoprecipitates of sodium were bombarded with swift ions (similar to GeV-Pb, U) or cluster beams (similar to 20 MeV-C-60) to study the phase change induced by electronic processes at high stopping power (>10 keV/nm). The sodium precipitates and the defect creation were characterized by optical absorption and transmission electron microscopy. The ion or cluster bombardment leads to an evolution of the Na precipitate concentration but the size distribution remains unchanged. The decrease in Na metallic concentration is attributed to mixing effects at the interfaces between Na clusters and MgO. In addition, optical-absorption measurements show a broadening of the absorption band associated with electron plasma oscillations in Na clusters. This effect is due to a decrease of the electron mean free path, which could be induced by defect creation in the metal. All these results show an influence of high electronic stopping power in materials known to be very resistant to irradiation with weak ionizing projectiles. The dependence of these effects on electronic stopping power and on various solid-state parameters is discussed.