Magnetic changes in GMR heads caused by electrostatic discharge

被引:74
作者
Wallash, A [1 ]
Kim, YK
机构
[1] Quantum Corp, Milpitas, CA 95035 USA
[2] MKE Quantum Components, Louisville, CO 80027 USA
关键词
ESD; GMR; MR; spin valve; recording heads;
D O I
10.1109/20.706602
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The effects of current transients on the magnetic response of GMR sensors is studied. It is shown that GMR sensors with an FeMn exchange layer exhibit large magnetic changes after a single ESD current transient. The energy which results in magnetic failure is only 0.9 nJ, which is much less than the 6 nJ which causes physical melting damage to the GMR sensor. These serious magnetic changes are explained in terms of resetting of the FeMn exchange layer direction due to the elevated temperature and internal magnetic field during the current transient. It is concluded that ESD stress testing of GMR sensors has revealed a new and important magnetic failure mechanism in GMR sensors.
引用
收藏
页码:1519 / 1521
页数:3
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