Standardized ESD test for magnetoresistive recording heads

被引:37
作者
Wallash, AJ
机构
[1] Quantum Corporation, Milpitas, CA 95035
关键词
D O I
10.1109/20.617795
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A methodology and apparatus are described for completely characterizing the electrostatic discharge (ESD) sensitivity of magnetoresistive (MR) recording heads. ESD testing of MR heads from six vendors was performed and a ''Human Body Model'' (HBM) failure voltage as low as 85 V was measured, Air gap breakdown voltages ranging from 400 V to 1100 V were also found. Two new findings were MR sensor damage when ESD pulses were injected into non-MR pins and corona damage. SEM failure analysis after ESD testing showed melting, pitting, and corona damage of the recording head structure, It is concluded that the MR/ESD tester is useful in studying the electrostatic properties of MR recording heads.
引用
收藏
页码:2911 / 2913
页数:3
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