Is there an effect of the proximity of a ''free-surface'' on the formation of End-Of-Range defects?

We have studied the effect of the proximity of the wafer surface on the formation of End-Of-Range defects. These experiments are aimed at elucidating the behavior, upon annealing, of the Si self-interstitial supersaturation responsible for transient enhanced diffusion of boron in pre-amorphized silicon wafers. By implanting with Ge at constant energy while carefully etching away increasing thicknesses of the amorphous layer the nucleation and growth of End-Of-Range defects have been studied by transmission electron microscopy. Clearly, no influence in the loop population can be shown even when using state-of-the-art ''quantitative'' electron microscopy. These results are explained by considering that the c/a interface is a diffusion barrier for the Si self-interstitial atoms during the nucleation stage, i.e., when the supersaturation is high. Only after the solid phase epitaxial regrowth, i.e., during the coalescence of the loops when the supersaturation is already low, the surface can interact with the loops. However, this interaction is not measurable through the observation of extended defects and this leads to simplifying assumptions for the simulation of Transient Enhanced or Retarded Diffusion in pre-amorphized Si wafers.