RHEED study of Pd thin film growth on α-Al2O3 substrate

被引：14

作者：

Masek, K ^{[1
]}

Matolin, V ^{[1
]}

机构：

[1] Charles Univ, Fac Math & Phys, Dept Elect & Vacuum Phys, CR-18000 Prague 8, Czech Republic

来源：

VACUUM | 1998年 / 50卷 / 1-2期

关键词：

D O I：

10.1016/S0042-207X(98)00027-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The epitaxial growth of very thin palladium layers on alpha-Al2O3 (11 (2) over bar 0) single-crystalline substrates was controlled in situ by Reflection High Electron Energy Diffraction. The substrates were prepared by heating in air and/or under vacuum in order to obtain well stoichiometric and partially reduced surfaces, respectively. The three-dimensional growth mode has been found, giving two populations of particles having (1 1 1) plane parallel to the (11 (2) over bar 0) substrate surface and different azimuthal orientations. The stoichiometry of the substrate surface did not influence the structure and epitaxial parameters of the overlayer. (C) 1998 Elsevier Science Ltd. All rights reserved.

引用

页码：151 / 155

页数：5

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