Cellular dislocation patterning during plastic deformation

被引:20
作者
Bako, Botond [1 ]
Hoffelner, Wolfgang [1 ]
机构
[1] Paul Scherrer Inst, CH-5232 Villigen, Switzerland
来源
PHYSICAL REVIEW B | 2007年 / 76卷 / 21期
关键词
D O I
10.1103/PhysRevB.76.214108
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A simulation of dislocation patterning in a two-dimensional multislip configuration is carried out by means of coarse graining in the presence of plastic strain. In order to study the influence of climb on the dislocation cell pattern formation, fatigue simulations with and without climb mobility are performed and compared. The main result is that, in the presence of climb, cellular structures with well-defined characteristic length emerge, in contrast to the self-similar dislocation patterns developing under similar deformation conditions in the absence of climb. Despite the simplicity of our model, the fractal dimension of the self-similar dislocation patterns emerging without climb confirms the previous results for fcc crystals deformed in a multislip configuration. The cell structures emerging when climb is not negligible (in our simulations a climb mobility 1000 times smaller than the glide mobility was considered) resemble the dislocation patterns seen in thermal recovery or melt-grown experiments.
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页数:6
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