Laser operation of Nd:LaF3 thin film grown by molecular beam epitaxy

被引：31

作者：

Daran, E ^{[1
]}

Shepherd, DP

Bhutta, T

Serrano, C

机构：

[1] CNRS, Lab Anal & Architecture Syst, F-31077 Toulouse, France

[2] Univ Southampton, Optoelect Res Ctr, Southampton SO17 1BJ, Hants, England

来源：

ELECTRONICS LETTERS | 1999年 / 35卷 / 05期

关键词：

D O I：

10.1049/el:19990303

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Details of the first laser operation of a dielectric waveguide fabricated by molecular beam epitaxy are presented. The growth process, Nd:LaF3 spectroscopic properties, and laser performance at 106 mu m are discussed.

引用

页码：398 / 400

页数：3

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