Effects of H2-dilution and plasma power in amorphous silicon deposition:: Comparison of microstructural evolution and solar cell performance

被引：4

作者：

Ferlauto, AS ^{[1
]}

Rovira, PI ^{[1
]}

Koval, RJ ^{[1
]}

Wronski, CR ^{[1
]}

Collins, RW ^{[1
]}

机构：

[1] Penn State Univ, Mat Res Lab, Ctr Thin Film Devices, University Pk, PA 16802 USA

来源：

CONFERENCE RECORD OF THE TWENTY-EIGHTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 2000 | 2000年

关键词：

D O I：

10.1109/PVSC.2000.915968

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

An extended phase diagram for rf plasma-enhanced chemical vapor deposition of Si:H identifies a narrow window of R for optimum a-Si:H i-layer growth (called the protocrystalline regime) in which the film surface remains very smooth and stable throughout the deposition of a layer >3000 Angstrom thick. In this study, we consider the effect of increased rf plasma power on the extended phase diagram, and demonstrate that the optimum window that exists under low power conditions (low rate: 0.5 Angstrom /s) in fact closes at high power levels (high rate: 5 Angstrom /s). The microstructural evolution for a-Si:H films prepared at different rf plasma powers is correlated with the performance and stability of a-Si:H p-i-n solar cells having i-layers prepared under similar conditions, and results further supporting the validity of the phase diagram concept are obtained.

引用

页码：713 / 716

页数：4

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