An energy-transport model for semiconductors derived from the Boltzmann equation

被引：102

作者：

BenAbdallah, N ^{[1
]}

Degond, P ^{[1
]}

Genieys, S ^{[1
]}

机构：

[1] INST ADV STUDY,PRINCETON,NJ 08540

来源：

JOURNAL OF STATISTICAL PHYSICS | 1996年 / 84卷 / 1-2期

关键词：

semiconductors; kinetic equations; Boltzmann transport equation; degenerate gases; Fermi-Dirac statistics; diffusion approximation; drift-diffusion model; energy transport; hydrodynamic model; Hilbert expansion; Chapman-Enskog expansion;

D O I：

10.1007/BF02179583

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

An energy-transport model is rigorously derived from the Boltzmann transport equation of semiconductors under the hypothesis that the energy gain or loss of the electrons by the phonon collisions is weak. Retaining al leading order electron-electron collisions and elastic collisions (i.e., impurity scattering and the ''elastic part'' of phonon collisions), a rigorous diffusion limit of the Boltzmann equation can be carried over, which leads to a set of diffusion equations for the electron density and temperature. The derivation is given in both the degenerate and nondegenerate cases.

引用

页码：205 / 231

页数：27

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