Nanosize ferroelectric oxide -: tracking down the superparaelectric limit

被引:105
作者
Rüdiger, A
Schneller, T
Roelofs, A
Tiedke, S
Schmitz, T
Waser, R
机构
[1] Forschungszentrum Julich, Ctr Nanoelect Syst Informat Technol, D-52425 Julich, Germany
[2] Rhein Westfal TH Aachen, Inst Elect Mat, D-52074 Aachen, Germany
[3] Seagate Technol, Pittsburgh, PA 15222 USA
[4] aixACCT Syst GmbH, D-52068 Aachen, Germany
来源
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2005年 / 80卷 / 06期
关键词
D O I
10.1007/s00339-004-3167-z
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Free ferroelectric nanoparticles in the order of 10 nm undergo a size driven phase transition into a paraelectric phase. However, in all applications, especially in ferroelectric random access memories, ferroelectric nanograins are integrated into a circuit. They are therefore exposed to new electromechanical boundary conditions e.g. substrate strain and screening of the depolarization field in the electrodes. Carefully adapted to the respective material, some of the extrinsic effects can be used to stabilize ferroelectricity and to shrink the ultimate size. The system performance is very sensitive to the fabrication and processing procedures.
引用
收藏
页码:1247 / 1255
页数:9
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