Anatase phase TiO2 thin films obtained by pulsed laser deposition for gas sensing applications

被引:108
作者
György, E
Socol, G
Axente, E
Mihailescu, IN
Ducu, C
Ciuca, S
机构
[1] Inst Atom Phys, Lasers Dept, R-76900 Bucharest, Romania
[2] Univ Pitesti, Pitesti 110040, Romania
[3] Univ Politehn Bucuresti, Bucharest 77204 VI, Romania
关键词
anatase phase TiO2 thin films; pulsed laser deposition; optical properties; optical sensors applications;
D O I
10.1016/j.apsusc.2005.01.074
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Anatase phase titanium dioxide (TiO2) thin films were grown by pulsed laser deposition on (001) SiO2 substrates. An UV KrF* (lambda = 248 nm, tau(FWHM) congruent to 20 ns, v = 2 Hz) excimer laser was used for the irradiation of the TiO2 targets. The substrates were kept at room temperature or heated during the film deposition at values within the 100-500 degrees C range. The crystalline quality of the films and their chemical composition were investigated by X-ray diffractometry and energy dispersive X-ray spectroscopy. The optical properties were studied by a double beam spectrophotometer in the spectral range of 400-1200 nm. At substrate temperatures higher than 300 degrees C, the structure of the deposited thin films changes from poorly to well crystallised, corresponding to the tetragonal TiO2 anatase phase. The average optical transmittance in the visible-infrared spectral range of the films is higher than 85% which makes them suitable for sensor applications. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码:429 / 433
页数:5
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