ULTRA-THIN TIO2 FILMS BY A NOVEL METHOD

被引:48
作者
DESU, SB
机构
[1] Department of Materials Engineering, Virginia Polytechnic Institute, State University, Blacksburg
来源
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1992年 / 13卷 / 04期
关键词
D O I
10.1016/0921-5107(92)90132-S
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Ultra-thin TiO2 films were grown by a novel process-successive layer-wise chemisorption-on substrates such as fused quartz and single crystal silicon. Alternate chemisorption of easily hydrolysed TiCl4 and water on a previously hydroxylated substrate surface permitted the synthesis of TiO2 films with thickness precision down to a monolayer. The film thickness is insensitive to growth temperature in the region of 170-240-degrees-C. The cycle thickness (growth rate per cycle) is around 0.27 nm under the growth conditions used. The films have anatase structure and the composition (Ti/O ratio) was shown to be 2. Refractive index of as-deposited films is 2.7 at 632.8 nm.
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页码:299 / 303
页数:5
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