Photoluminescence investigation of InGaN/GaN single quantum well and multiple quantum wells

被引：111

作者：

Wang, T ^{[1
]}

Nakagawa, D ^{[1
]}

Wang, J ^{[1
]}

Sugahara, T ^{[1
]}

Sakai, S ^{[1
]}

机构：

[1] Univ Tokushima, Dept Elect & Elect Engn, Satellite Venture Business Lab, Tokushima 770, Japan

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 24期

关键词：

D O I：

10.1063/1.122810

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The photoluminescence investigation at a low temperature was carried out in In0.13Ga0.87N/GaN single quantum well (SQW) and multiple quantum wells with 10 (10QW) or 5 periods. With decreasing number of wells, the emission peak shows a redshift. In the case of a low excitation power, the emission intensity is enhanced by an increase in the number of wells while it decreases in the case of a high excitation power. With increasing excitation power, the emission peak of the SQW exhibits a blueshift and its linewidth decreases, but the emission peak of the 10QW remains unchanged and its linewidth increases. Based on the theory of the quantum confined Stark effect, the behavior of the SQW and the 10QW can be well explained. This result should be highly emphasized in designing InGaN/GaN based optical devices. (C) 1998 American Institute of Physics. [S0003-6951(98)03450-0].

引用

页码：3571 / 3573

页数：3

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