''Blue'' temperature-induced shift and band-tail emission in InGaN-based light sources

被引：531

作者：

Eliseev, PG

Perlin, P

Lee, JY

Osinski, M

机构：

[1] Center for High Technology Materials, University of New Mexico, Albuquerque

[2] P. N. Lebedev Physics Institute, Moscow

[3] High Pressure Reasearch Ctr. - U., 01-142 Warsaw

[4] Satallite Venture Business Laboatory, University of Tokushima, Tokushima 770

来源：

APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 05期

关键词：

D O I：

10.1063/1.119797

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electro- and photoluminescence spectra of high-brightness light-emitting AlGaN/InGaN/GaN single-quantum-well structures are studied over a broad range of temperatures and pumping levels. Blue shift of the spectral peak position was observed along with an increase of temperature and current. An involvement of band-tail states in the radiative recombination was considered, and a quantitative description of the blue temperature-induced shift was proposed assuming a Gaussian shape of the band tail. (C) 1997 American Institute of Physics.

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页码：569 / 571

页数：3

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