Spin splitting and spin current in strained bulk semiconductors

被引:55
作者
Bernevig, BA [1 ]
Zhang, SC [1 ]
机构
[1] Stanford Univ, Dept Phys, Stanford, CA 94305 USA
来源
PHYSICAL REVIEW B | 2005年 / 72卷 / 11期
基金
美国国家科学基金会;
关键词
D O I
10.1103/PhysRevB.72.115204
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We present an analysis for two recent experiments in bulk strained semiconductors and show that a new, previously overlooked, strain spin-orbit coupling term may play a fundamental role. We propose simple experiments that could clarify the origin of strain-induced spin-orbit coupling terms in inversion asymmetric semiconductors. We predict that a uniform magnetization parallel to the electric field will be induced for specific directions of the applied electric field. We also propose special geometries to detect spin currents in strained semiconductors.
引用
收藏
页数:6
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