1.55 μm intersubband pumping of an In0.53Ga0.47As/AlAs: InP symmetric double quantum well terahertz laser

被引：5

作者：

Harrison, P ^{[1
]}

Kelsall, RW ^{[1
]}

机构：

[1] Univ Leeds, Sch Elect & Elect Engn, Inst Microwaves & Photon, Leeds LS2 9JT, W Yorkshire, England

来源：

PHYSICA E | 1998年 / 2卷 / 1-4期

关键词：

terahertz laser; intersubband; InGaAs;

D O I：

10.1016/S1386-9477(98)00096-4

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The feasibility of intersubband optical excitation of a terahertz (1-10 THz) or far-infrared (30-300 mu m) emitter/laser by a 1.55 mu m laser diode is investigated by means of envelope function/effective mass approximation and subband carrier lifetime calculations. The In0.53Ga0.47As/AlAs material system is employed in order to supply the necessary conduction band offset and the basic design is that of a 6-level symmetric double quantum well. This can simultaneously satisfy the criteria of an 800 meV intersubband absorption and a far-infrared emission. It is shown that these device designs can satisfy a necessary criterion for population inversion at room temperature. A scheme for improving the population ratio based on a 9-level triple quantum well is discussed. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：468 / 472

页数：5

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