Image-charge and excitonic effects on the oscillator strength of silicon quantum dots

被引：6

作者：

Iwamatsu, M ^{[1
]}

机构：

[1] Hiroshima City Univ, Dept Comp Engn, Asaminami Ku, Hiroshima 7313194, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1998年 / 37卷 / 10期

关键词：

oscillator strength; quantum dot; image-charge; exciton; silicon;

D O I：

10.1143/JJAP.37.5620

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The enhancement of oscillator strength of silicon quantum dots (small crystallites) by the image charge and the excitonic electron-hole attraction is examined theoretically using a simple effective-mass model. While the distortion of the envelope function is found to be significant for the dot with a radius greater than 1 nm, the enhancement of the oscillator strength is significant only when the doe radius is smaller than 1 nm.

引用

页码：5620 / 5621

页数：2

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