ABSORPTION AND EMISSION OF LIGHT IN NANOSCALE SILICON STRUCTURES

被引：372

作者：

HYBERTSEN, MS

机构：

[1] AT and T Bell Laboratories, Murray Hill, NJ 07974

来源：

PHYSICAL REVIEW LETTERS | 1994年 / 72卷 / 10期

关键词：

D O I：

10.1103/PhysRevLett.72.1514

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A unified model of phonon-assisted and zero-phonon radiative transitions in nanoscale silicon structures is presented. For characteristic size above 15-20 angstrom, phonon-assisted transitions dominate, while zero-phonon transitions, allowed due to the finite-size effect, are more important for smaller length scales. Light emission from Porous silicon is analyzed on the basis of these results showing that phonon-assisted transitions should dominate the emission in the observed red band.

引用

页码：1514 / 1517

页数：4

共 27 条

[1]

BAWNEDI MG, 1990, PHYS REV LETT, V65, P1623

[2] OPTICAL-PROPERTIES OF POROUS SILICON - A 1ST-PRINCIPLES STUDY [J].