RELATIVE INTENSITIES OF INDIRECT TRANSITIONS - ELECTRON-PHONON AND HOLE-PHONON INTERACTION MATRIX-ELEMENTS IN SI (TO) AND GAP (LA,TA)

被引:26
作者
GLEMBOCKI, OJ
POLLAK, FH
机构
来源
PHYSICAL REVIEW B | 1982年 / 25卷 / 02期
关键词
D O I
10.1103/PhysRevB.25.1193
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
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页码:1193 / 1204
页数:12
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共 43 条
[1]  
Alkeev N. V., 1976, Soviet Physics - Solid State, V18, P410
[2]  
BLOSSEY DF, 1972, SEMICONDUCTORS SEMIM, V9, P305
[3]  
CAPIZZI M, 1978, PHYS REV B, V17, P4821
[4]   ENERGY-BAND STRUCTURE OF GERMANIUM AND SILICON - K.P METHOD [J].
CARDONA, M ;
POLLAK, FH .
PHYSICAL REVIEW, 1966, 142 (02) :530-&
[5]   ELECTROREFLECTANCE AT A SEMICONDUCTOR-ELECTROLYTE INTERFACE [J].
CARDONA, M ;
SHAKLEE, KL ;
POLLAK, FH .
PHYSICAL REVIEW, 1967, 154 (03) :696-+
[6]  
COHEN ML, 1971, PHYSICS SEMIMETALS N, P303
[7]  
COHEN ML, 1970, SOLID STATE PHYS, V24, P38
[8]   RADIATIVE RECOMBINATION MECHANISMS IN GAASP DIODES WITH AND WITHOUT NITROGEN DOPING [J].
CRAFORD, MG ;
SHAW, RW ;
HERZOG, AH ;
GROVES, WO .
JOURNAL OF APPLIED PHYSICS, 1972, 43 (10) :4075-&
[9]   INTRINSIC ABSORPTION-EDGE SPECTRUM OF GALLIUM PHOSPHIDE [J].
DEAN, PJ ;
THOMAS, DG .
PHYSICAL REVIEW, 1966, 150 (02) :690-&
[10]   VALLEY-ORBIT SPLITTING OF INDIRECT FREE EXCITON IN SILICON [J].
DEAN, PJ ;
YAFET, Y ;
HAYNES, JR .
PHYSICAL REVIEW, 1969, 184 (03) :837-&