Photoluminescence and band edge alignment of C-induced Ge islands and related SiGeC structures

被引：23

作者：

Schmidt, OG ^{[1
]}

Eberl, K ^{[1
]}

机构：

[1] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 19期

关键词：

D O I：

10.1063/1.122592

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Growth of less than 2 monolayers Ge on a submonolayer amount of predeposited C on Si results in the formation of very small Ge quantum islands. In a photoluminescence study, we compare these C-induced Ge (CGe) dots with carefully chosen reference structures incorporating the same total amount of C and Ge but with different deposition orders and with varied C distribution below the Ge islands. Our investigations imply that the special combination of pregrown low surface mobility C and post-grown high surface mobility Ge constitutes a distinct microstructure within the SiGeC material system, causing dot formation at a very early stage and showing particularly intense photoluminescence signal. Moreover, structures combining CGe dots with Si1-yCy quantum wells are well explained by the model of spatially indirect type-II recombination within the CGe islands. (C) 1998 American Institute of Physics. [S0003-6951(98)03945-X].

引用

页码：2790 / 2792

页数：3

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