Formation of carbon-induced germanium dots

被引:163
作者
Schmidt, OG [1 ]
Lange, C [1 ]
Eberl, K [1 ]
Kienzle, O [1 ]
Ernst, F [1 ]
机构
[1] MAX PLANCK INST MET RES,D-70174 STUTTGART,GERMANY
关键词
D O I
10.1063/1.120072
中图分类号
O59 [应用物理学];
学科分类号
摘要
A very small amount of pre-deposited C on a Si substrate causes island formation after epitaxial growth of less than 2 monolayers Ge. These C-induced Ge dots can be as small as 10 nm in lateral size and 1 nm in height. Their areal density is 10(11) cm(-2). Intense photoluminescence signal from these small Ge quantum dots is observed reaching a maximum for 2.1+/-0.3 monolayers of Ge. In the initial stages of island formation, the optical transition of the wetting layer is blue-shifted by strain compensation effects. We propose spatially indirect mechanisms of radiative recombination between electrons confined in the underlying wetting layer and holes confined in the Ge islands. (C) 1997 American Institute of Physics.
引用
收藏
页码:2340 / 2342
页数:3
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