Highly manufacturable 4Gb DRAM using 0.11μm DRAM technology

被引：13

作者：

Jeong, HS ^{[1
]}

Yang, WS ^{[1
]}

Hwang, YS ^{[1
]}

Cho, CH ^{[1
]}

Park, S ^{[1
]}

Ahn, SJ ^{[1
]}

Chun, YS ^{[1
]}

Shin, SH ^{[1
]}

Song, SH ^{[1
]}

Lee, JY ^{[1
]}

Jang, SM ^{[1
]}

Lee, CH ^{[1
]}

Jeong, JH ^{[1
]}

Cho, MH ^{[1
]}

Lee, JK ^{[1
]}

Kim, K ^{[1
]}

机构：

[1] Samsung Elect Co Ltd, Semicond R&D Div, Technol Dev, Yongin 449900, Kyunggi Do, South Korea

来源：

INTERNATIONAL ELECTRON DEVICES MEETING 2000, TECHNICAL DIGEST | 2000年

关键词：

D O I：

10.1109/IEDM.2000.904328

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

4Gb DRAM has been developed successfully using 0.11 mum DRAM technology. Considering manufacturability, we have focused to develop patterning technology that makes 0.11 mum design rule possible using KrF lithography. Also, novel DRAM technologies, which give a big influence on the future DRAM integration, are developed as follows, using novel oxide(SOG) for the enhanced capability of gap-filling, borderless metal contact and stud processes, line-type storage node SAC, thin gate oxide, and CVD Al process for metal interconnections.

引用

页码：353 / 356

页数：4