Characterization of GaAlN/GaN superlattice heterostructures

被引：2

作者：

Makkai, Z

Pécz, B

di Forte-Poisson, MA

Huet, F

机构：

[1] Hungarian Acad Sci, Res Inst Tech Phys & Mat Sci, HU-1525 Budapest, Hungary

[2] Thomson CSF, Cent Rech Lab, FR-91401 Orsay, France

来源：

SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000 | 2001年 / 353-356卷

关键词：

inversion domains; segregation; superlattice; surface pits;

D O I：

10.4028/www.scientific.net/MSF.353-356.803

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

GaAlN/GaN superlattices are grown onto GaN by MOCVD. Cross sectional transmission electron microscopy is used for the characterisation of the layers. V-shaped surface pits are observed on the surface of the layers. Inversion domains are found consequently in the middle of the V pits. Segregation of aluminium occurs in the inverted hexagonal pyramids.

引用

页码：803 / 806

页数：4

共 14 条

[11]

Romano LT, 1997, MATER RES SOC SYMP P, V449, P423

[12]

Rouviere JL, 1995, INST PHYS CONF SER, V146, P285

[13] Morphological and structural characteristics of homoepitaxial GaN grown by metalorganic chemical vapour deposition (MOCVD) [J].

Weyher, JL ;

Brown, PD ;

Zauner, ARA ;

Müller, S ;

Boothroyd, CB ;

Foord, DT ;

Hageman, PR ;

Humphreys, CJ ;

Larsen, PK ;

Grzegory, I ;

Porowski, S .

JOURNAL OF CRYSTAL GROWTH, 1999, 204 (04) :419-428

[14] Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells [J].

Wu, XH ;

Elsass, CR ;

Abare, A ;

Mack, M ;

Keller, S ;

Petroff, PM ;

DenBaars, SP ;

Speck, JS ;

Rosner, SJ .

APPLIED PHYSICS LETTERS, 1998, 72 (06) :692-694

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