Frequency operation of low-voltage, solution-processed organic field-effect transistors

被引：24

作者：

Caironi, M. ^{[1
]}

Noh, Y-Y ^{[2
]}

Sirringhaus, H. ^{[3
]}

机构：

[1] PoliMi, CNST IIT, I-20133 Milan, Italy

[2] Hanbat Natl Univ, Dept Chem Engn, Taejon 305719, South Korea

[3] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2011年 / 26卷 / 03期

基金：

英国工程与自然科学研究理事会;

关键词：

THIN-FILM TRANSISTORS; RESOLUTION; POLYMER; MOBILITY;

D O I：

10.1088/0268-1242/26/3/034006

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A detailed analysis of the frequency operation of low-voltage, solution-processed organic field-effect transistors (FETs) is reported. The relevant figures of merit, such as the transition frequency f(T), are introduced starting from first principles, and the main parameters affecting them are elucidated on the basis of experimental evidence collected on devices fabricated with different technologies. Focus is on the development of printed FETs, fabricated with a bottom-up, scalable approach, showing f(T) > 1 MHz.

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页数：8

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