Organic complementary oscillators with stage-delays below 1 μs

被引：29

作者：

Bode, Dieter ^{[1
,2
]}

Myny, Kris ^{[1
,2
]}

Verreet, Bregt ^{[1
,2
]}

van der Putten, Bas ^{[3
]}

Bakalov, Petar ^{[4
]}

Steudel, Soeren ^{[1
]}

Smout, Steve ^{[1
]}

Vicca, Peter ^{[1
]}

Genoe, Jan ^{[1
]}

Heremans, Paul ^{[1
,2
]}

机构：

[1] IMEC, Dept Large Area Elect, B-3001 Leuven, Belgium

[2] Katholieke Univ Leuven, Dept Elect Engn, B-3001 Leuven, Belgium

[3] TNO, NL-5656 AE Eindhoven, Netherlands

[4] Jacobs Univ, D-28759 Bremen, Germany

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 13期

关键词：

fullerene devices; fullerenes; organic field effect transistors; organic semiconductors; oscillators; thin film transistors; FIELD-EFFECT TRANSISTORS; CIRCUITS; CONTACT;

D O I：

10.1063/1.3373630

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Recently, complex circuits of organic thin-film transistors have been shown. The use of complementary logic can significantly ease the design of large integrated circuits. However, the performance of complementary logic in organic thin-film technology has not been able to equivale that of unipolar logic, due to the difficulty to densely integrate and simultaneously optimize p-type and n-type transistors on a single substrate. Here, we develop an optimized complementary process for C(60) n-type and pentacene p-type transistors, both having bottom-gate bottom-contact geometry. Using this complementary technology, we show ring-oscillators with a stage-delay below 1 mu s at a supply-voltage of 20 V.

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