Threshold voltage control of bottom-contact n-channel organic thin-film transistors using modified drain/source electrodes

被引：56

作者：

Kitamura, Masatoshi ^{[1
]}

Kuzumoto, Yasutaka ^{[1
,2
]}

Aomori, Shigeru ^{[1
,2
]}

Kamura, Masakazu ^{[1
,2
]}

Na, Jong Ho ^{[1
]}

Arakawa, Yasuhiko ^{[1
,3
]}

机构：

[1] Univ Tokyo, INQIE, Meguro Ku, Tokyo 1538505, Japan

[2] Sharp Co Ltd, Adv Technol Res Labs, Nara 6328567, Japan

[3] Univ Tokyo, Adv Sci & Technol Res Ctr, Meguro Ku, Tokyo 1538904, Japan

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 08期

关键词：

charge injection; electrodes; electron mobility; fullerene devices; fullerenes; thin film transistors;

D O I：

10.1063/1.3090489

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Bottom-contact n-channel C-60 thin-film transistors (TFTs) with drain/source electrodes modified by benzenethiol derivatives have been fabricated to investigate the influence of the modification on the transistor characteristics. Modification using methylbenzenethiol, aminobenzenethiol, and (dimethylamino)benzenethiol having electron-donating groups causes threshold voltages to shift to low voltages. In addition, the modification provides no significant decrease in saturation mobilities. A C-60 TFT with (dimethylamino)benzenethiol-modified electrodes has a low threshold voltage of 5.1 V as compared to that of 16.8 V for a TFT with nonmodified electrodes. The threshold-voltage shift is probably because the modification reduces electron-injection barrier height and improves electron injection into organic semiconductors.

引用

页数：3

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