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High-performance fullerene C60 thin-film transistors operating at low voltages

被引：21
作者：
Kitamura, Masatoshi
Kuzumoto, Yasutaka
Kamura, Masakazu
Aomori, Shigeru
Arakawa, Yasuhiko
机构：
[1] Univ Tokyo, Inst Nano Quantum Informat Elect, Meguro Ku, Tokyo 1538505, Japan
[2] Univ Tokyo, Inst Nano Quantum Informat Elect, Nara 6328567, Japan
[3] Sharp Co Ltd, Adv Technol Res Labs, Nara 6328567, Japan
[4] Univ Tokyo, Adv Sci & Technol Res Ctr, Tokyo 1538904, Japan
来源：
APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 18期
关键词：
D O I：
10.1063/1.2804004
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Low-voltage operation of fullerene C-60 thin-film transistors (TFTs) has been realized using zirconium-silicon oxide (ZSO) as a gate insulator. The gate insulator consisted of triple layers of SiO2/ZSO/SiO2 deposited by rf sputtering. The C-60 TFTs with the insulators operated at a low voltage of 5 V. The surface of the insulator was treated with hexamethyldisilazane (HMDS) or octadecyltrimethoxysilane (ODS). The C-60 TFT with the ODS-treated insulator exhibited higher performance than that with the HMDS-treated insulator, and it had a field-effect mobility of 1.46 cm(2)/V s, threshold voltage of 1.9 V, and a current on/off ratio of 2x10(6). (C) 2007 American Institute of Physics.
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页数：3
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