Tuning of Ag work functions by self-assembled monolayers of aromatic thiols for an efficient hole injection for solution processed triisopropylsilylethynyl pentacene organic thin film transistors

被引：245

作者：

Hong, Jung-Pyo ^{[1
]}

Park, Aee-Young ^{[1
]}

Lee, Seonghoon ^{[1
]}

Kang, Jihoon ^{[2
]}

Shin, Nayool ^{[2
]}

Yoon, Do Y. ^{[2
]}

机构：

[1] NS60 Seoul Natl Univ, Sch Chem, Mol Elect & NanoStructures Lab, Seoul 151747, South Korea

[2] NS60 Seoul Natl Univ, Sch Chem, Polymer Sci Lab, Seoul 151747, South Korea

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 14期

关键词：

D O I：

10.1063/1.2907691

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate tuning of hole injection barriers in bottom contact triisopropylsilylethynyl pentacene (TIPS-pentacene) organic thin film transistors (OTFTs) by forming the self-assembled monolayers (SAMs) of thiophenol, 4-fluorothiophenol, or pentafluorothiophenol on the pristine Ag electrode. The work functions of SAM-treated Ag electrodes are measured by Kelvin probe method. The TIPS-pentacene OTFT devices were fabricated by a drop-cast method with a micropipette like an inkjet printing. The OTFTs with pentafluorothiophenol-Ag electrodes as source and drain exhibit carrier mobility of 0.17 cm(2)/V s and on/off current ratio of 10(5) because of almost no hole injection barrier to TIPS pentacenes. The SAM-treated Ag electrodes are robust over repeated electrical scans of 100 cycles. (C) 2008 American Institute of Physics.

引用

页数：3

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