Bottom-contact fullerene C60 thin-film transistors with high field-effect mobilities

被引：40

作者：

Kitamura, Masatoshi ^{[1
]}

Aomori, Shigeru ^{[1
,2
]}

Na, Jong Ho ^{[1
,3
]}

Arakawa, Yasuhiko ^{[1
,3
]}

机构：

[1] Univ Tokyo, Inst Nano Quantum Informat Elect, Meguro Ku, Tokyo 1538505, Japan

[2] Sharp Co Ltd, Adv Technol Res Labs, Nara 6328567, Japan

[3] Univ Tokyo, Adv Sci & Technol Res Ctr, Meguro Ku, Tokyo 1538904, Japan

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 03期

关键词：

D O I：

10.1063/1.2959732

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Fullerene C-60 thin-film transistors (TFTs) with bottom-contact structure have been fabricated. The parasitic resistance was extracted using gated-transmission line method. The drain/source electrodes consisted of a single Au layer with no adhesion layer; the channel lengths ranged from 5 to 40 mu m. The field-effect mobilities in the saturation regime slightly depended on the channel length, ranging from 2.45 to 3.23 cm(2)/V s. The mobility of 3.23 cm(2)/V s was obtained from the TFT with a channel length of 5 mu m and is the highest in organic TFTs with bottom-contact structure. The high mobility is due to the low parasitic resistance. (C) 2008 American Institute of Physics.

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页数：3

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共 16 条

[1] High performance n-channel organic field-effect transistors and ring oscillators based on C60 fullerene films [J].

Anthopoulos, Thomas D. ;

Singh, Birendra ;

Marjanovic, Nenad ;

Sariciftci, Niyazi S. ;

Ramil, Alberto Montaigne ;

Sitter, Helmut ;

Colle, Michael ;

de Leeuw, Dago M. .

APPLIED PHYSICS LETTERS, 2006, 89 (21)

[2] Contact effects in organic thin film transistors with printed electrodes [J].

Benor, Amare ;

Knipp, Dietmar .

ORGANIC ELECTRONICS, 2008, 9 (02) :209-219

[3] An experimental study of contact effects in organic thin film transistors [J].

Gundlach, D. J. ;

Zhou, L. ;

Nichols, J. A. ;

Jackson, T. N. ;

Necliudov, P. V. ;

Shur, M. S. .

JOURNAL OF APPLIED PHYSICS, 2006, 100 (02)

[4] Fullerene based n-type organic thin-film transistors [J].

Haddock, JN ;

Zhang, XH ;

Domercq, B ;

Kippelen, B .

ORGANIC ELECTRONICS, 2005, 6 (04) :182-187

[5] C-60 THIN-FILM TRANSISTORS [J].

HADDON, RC ;

PEREL, AS ;

MORRIS, RC ;

PALSTRA, TTM ;

HEBARD, AF ;

FLEMING, RM .

APPLIED PHYSICS LETTERS, 1995, 67 (01) :121-123

[6] High-performance fullerene C60 thin-film transistors operating at low voltages [J].

Kitamura, Masatoshi ;

Kuzumoto, Yasutaka ;

Kamura, Masakazu ;

Aomori, Shigeru ;

Arakawa, Yasuhiko .

APPLIED PHYSICS LETTERS, 2007, 91 (18)

[7] Organic transistors based on di(phenylvinyl)anthracene: Performance and stability [J].

Klauk, Hagen ;

Zschieschang, Ute ;

Weitz, Ralf T. ;

Meng, Hong ;

Sun, Tangping ;

Nunes, Geoffrey ;

Keys, Dalen E. ;

Fincher, Curtis R. ;

Xiang, Zhen .

ADVANCED MATERIALS, 2007, 19 (22) :3882-+

[8] Fabrication and characterization of C60 thin-film transistors with high field-effect mobility [J].

Kobayashi, S ;

Takenobu, T ;

Mori, S ;

Fujiwara, A ;

Iwasa, Y .

APPLIED PHYSICS LETTERS, 2003, 82 (25) :4581-4583

[9] Reducing the contact resistance of bottom-contact pentacene thin-film transistors by employing a MoOx carrier injection layer [J].

Kumaki, Daisuke ;

Umeda, Tokiyoshi ;

Tokito, Shizuo .

APPLIED PHYSICS LETTERS, 2008, 92 (01)

[10] Contact resistance extraction in pentacene thin film transistors [J].

Necliudov, PV ;

Shur, MS ;

Gundlach, DJ ;

Jackson, TN .

SOLID-STATE ELECTRONICS, 2003, 47 (02) :259-262