Spin diode in the ballistic regime

被引：14

作者：

Schmeltzer, D ^{[1
]}

Saxena, A

Bishop, AR

Smith, DL

机构：

[1] CUNY City Coll, Dept Phys, New York, NY 10031 USA

[2] Los Alamos Natl Lab, Div Theoret, Los Alamos, NM 87545 USA

来源：

PHYSICAL REVIEW B | 2003年 / 68卷 / 19期

关键词：

D O I：

10.1103/PhysRevB.68.195317

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We propose a spin diode based on two semiconducting quantum wires coupled by a tunnel barrier. Applying a voltage and a magnetic field gradient between the two semiconductor wires, we obtain a spin current rectification device which operates in the ballistic regime. Using the scattering states formalism, we derive an exact analytic expression for the tunneling current. The characteristics I(V,H) of the spin diode are determined.

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页数：5

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