Unipolar spin diodes and transistors

被引：127

作者：

Flatté, ME ^{[1
]}

Vignale, G

机构：

[1] Univ Iowa, Dept Phys & Astron, Iowa City, IA 52242 USA

[2] Univ Missouri, Dept Phys & Astron, Columbia, MO 65211 USA

来源：

APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 09期

关键词：

D O I：

10.1063/1.1348317

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Unipolar devices constructed from ferromagnetic semiconducting materials with variable magnetization direction are shown theoretically to behave very similarly to nonmagnetic bipolar devices such as the p-n diode and the bipolar (junction) transistor. Such devices may be applicable for magnetic sensing, nonvolatile memory, and reprogrammable logic. (C) 2001 American Institute of Physics.

引用

页码：1273 / 1275

页数：3

共 20 条

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