Unipolar spin diodes and transistors

被引:127
作者
Flatté, ME [1 ]
Vignale, G
机构
[1] Univ Iowa, Dept Phys & Astron, Iowa City, IA 52242 USA
[2] Univ Missouri, Dept Phys & Astron, Columbia, MO 65211 USA
关键词
D O I
10.1063/1.1348317
中图分类号
O59 [应用物理学];
学科分类号
摘要
Unipolar devices constructed from ferromagnetic semiconducting materials with variable magnetization direction are shown theoretically to behave very similarly to nonmagnetic bipolar devices such as the p-n diode and the bipolar (junction) transistor. Such devices may be applicable for magnetic sensing, nonvolatile memory, and reprogrammable logic. (C) 2001 American Institute of Physics.
引用
收藏
页码:1273 / 1275
页数:3
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