Broad wavelength tunability of grating-coupled external cavity midinfrared semiconductor-lasers

被引：20

作者：

Le, HQ ^{[1
]}

Turner, GW ^{[1
]}

Ochoa, JR ^{[1
]}

Manfra, MJ ^{[1
]}

Cook, CC ^{[1
]}

Zhang, YH ^{[1
]}

机构：

[1] HUGHES RES LABS,MALIBU,CA 90265

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 19期

关键词：

D O I：

10.1063/1.116849

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Midinfrared InAs-based and GaSb-based semiconductor lasers with wavelengths from 3.3 to 4 mu m have been used iq a grating-tuned external cavity configuration. At 80 K, a tuning range up to similar to 8% of the center wavelength has been obtained. Power of 0.2 W peak, 20 mW average has been demonstrated for multimode operation with similar to 1-2 nm linewidth. (C) 1996 American Institute of Physics.

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页码：2804 / 2806

页数：3

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