High-K materials for nonvolatile memory applications

被引：27

作者：

Van Houdt, J ^{[1
]}

机构：

[1] IMEC VZW, B-3001 Louvain, Belgium

来源：

2005 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 43RD ANNUAL | 2005年

关键词：

flash memory; nonvolatile memory; high-k; materials; engineered barrier; TUNNELING CURRENT; HIMOS; MODEL;

D O I：

10.1109/RELPHY.2005.1493090

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper will propose solutions for the future scaling of tunnel and interpoly dielectrics (IPD) in Flash memories based on high-k materials. The concept of engineered barriers will be reviewed as well as the main reliability issues associated with the introduction of these materials in nonvolatile memory (NVM) devices. For completeness, the application of high-k materials in charge trapping devices is also addressed.

引用

收藏

页码：234 / 239

页数：6

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