Analysis of SAW properties of epitaxial ZnO films grown on R-Al2O3 substrates

被引：35

作者：

Emanetoglu, NW ^{[1
]}

Patounakis, G ^{[1
]}

Liang, SH ^{[1
]}

Gorla, CR ^{[1
]}

Wittstruck, R ^{[1
]}

Lu, YC ^{[1
]}

机构：

[1] Rutgers State Univ, Dept Elect & Comp Engn, Piscataway, NJ 08854 USA

来源：

IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL | 2001年 / 48卷 / 05期

关键词：

D O I：

10.1109/58.949748

中图分类号：

O42 [声学];

学科分类号：

070206 ; 082403 ;

摘要：

ZnO thin films with a high piezoelectric coupling coefficient are widely used for high frequency and low loss surface acoustic wave (SAW) devices when the film is deposited on top of a high acoustic velocity substrate, such as diamond or sapphire. The performance of these devices is critically dependent on the quality of the ZnO films as well as of the interface between ZnO and the substrate. In this paper, we report the studies on piezoelectric properties of epitaxial (11 (2) over bar0) ZnO thin films grown on R-plane sapphire substrates using metal organic chemical vapor deposition (MOCVD) technique. The c-axis of the ZnO film is in-plane. The ZnO/R-AL(2)O(3) interface is atomically sharp. SAW delay lines, aligned parallel to the c-axis, were used to characterize the surface wave velocity, coupling coefficient, and temperature coefficient of frequency as functions of film thickness to wavelength ratio (h/lambda). The acoustic wave properties of the material system were calculated using Adler's matrix method, and the devices were simulated using the quasi-static approximation based on Green's function analysis.

引用

页码：1389 / 1394

页数：6

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