Infrared measurements of InN films at low temperatures

被引：14

作者：

Ishitani, Y ^{[1
]}

Xu, K ^{[1
]}

Terashima, W ^{[1
]}

Hashimoto, N ^{[1
]}

Yoshitani, M ^{[1
]}

Hata, T ^{[1
]}

Yoshikawa, A ^{[1
]}

机构：

[1] Chiba Univ, Dept Elect & Mech Engn, Chiba, Japan

来源：

5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS | 2003年 / 0卷 / 07期

关键词：

D O I：

10.1002/pssc.200303400

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

InN crystals with the electron concentration N-e of 4-11 x 10(18) cm(-3) are grown on sapphire substrates by molecular beam epitaxy. Optical reflectance and transmission measurements are performed in a temperature range of 5 to 296 K. The reflectance spectra are analysed by simulation including the longitudinal optical phonon-plasmon coupling scheme. At a N-e value of 4 x 10(18) cm(-3), the electronic states are found to be still degenerated. An anomalous temperature dependence of the bandgp energy E-s is found; with decreasing temperature E-g increases, and then decreases below 50 K. This decrease is smaller for samples with smaller N-e. In spite of this energy shift the decrease of N-e is too small to be detected. The effective electron mass of the intrinsic region is estimated to be 0.1m(0). (C) 2003 WILEYNCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：2838 / 2841

页数：4

共 7 条

[1] Experimental and theoretical studies of phonons in hexagonal InN [J].

Davydov, VY ;

Emtsev, VV ;

Goncharuk, IN ;

Smirnov, AN ;

Petrikov, VD ;

Mamutin, VV ;

Vekshin, VA ;

Ivanov, SV ;

Smirnov, MB ;

Inushima, T .

APPLIED PHYSICS LETTERS, 1999, 75 (21) :3297-3299

[2] Effective electron mass and phonon modes in n-type hexagonal InN -: art. no. 115206 [J].

Kasic, A ;

Schubert, M ;

Saito, Y ;

Nanishi, Y ;

Wagner, G .

PHYSICAL REVIEW B, 2002, 65 (11) :1152061-1152067

[3] PHONON-INDUCED LIFETIME BROADENINGS OF ELECTRONIC STATES AND CRITICAL-POINTS IN SI AND GE [J].

LAUTENSCHLAGER, P ;

ALLEN, PB ;

CARDONA, M .

PHYSICAL REVIEW B, 1986, 33 (08) :5501-5511

[4] Growth-dependent phonon characteristics in InN thin films [J].

Qian, ZG ;

Yu, G ;

Shen, WZ ;

Ogawa, H ;

Guo, QX .

PHYSICA B-CONDENSED MATTER, 2002, 318 (2-3) :180-187

[5] Unusual properties of the fundamental band gap of InN [J].

Wu, J ;

Walukiewicz, W ;

Yu, KM ;

Ager, JW ;

Haller, EE ;

Lu, H ;

Schaff, WJ ;

Saito, Y ;

Nanishi, Y .

APPLIED PHYSICS LETTERS, 2002, 80 (21) :3967-3969

[6]

WU J, 2002, PHYS REV B, V66, P2

[7]

Xu K, 2002, INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, PROCEEDINGS, P377

← 1 →