Growth-dependent phonon characteristics in InN thin films

被引：23

作者：

Qian, ZG

Yu, G

Shen, WZ

Ogawa, H

Guo, QX

机构：

[1] Shanghai Jiao Tong Univ, Dept Phys, Lab Condensed Matter Spect & Optoelect Phys, Shanghai 200030, Peoples R China

[2] Saga Univ, Fac Sci & Engn, Dept Elect & Elect Engn, Saga 8408502, Japan

来源：

PHYSICA B-CONDENSED MATTER | 2002年 / 318卷 / 2-3期

基金：

中国国家自然科学基金;

关键词：

phonon characteristics; InN thin films; growth dependence;

D O I：

10.1016/S0921-4526(02)00569-0

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We report on the infrared (IR) reflection and Raman measurements of InN thin films grown by radio frequency (RF) magnetron sputtering and microwave-excited metalorganic vapor phase epitaxy (ME-MOVPE) on GaAs (I 1 1) and sapphire (0 0 0 1) substrates. X-ray diffraction measurements were employed to evaluate the quality of the InN films. By fitting the IR reflection spectra and from the Raman spectra, A(1) (TO), E-1 (TO), A(1) (LO) and E-2 (high) modes have been observed and attributed. The phonon characteristics in InN thin films as well as the film quality of InN films are found to be dependent on the growth conditions from a comparison of the results. The carrier concentration and mobility are also obtained from fitting the IR reflection spectra. The frequencies of El (TO) and A, (LO) phonon modes show a manifest blueshift due to the residual compressive stress in the films. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：180 / 187

页数：8

共 31 条

[1] InN thin films grown by metalorganic molecular beam epitaxy on sapphire substrates [J].

Aderhold, J ;

Davydov, VY ;

Fedler, F ;

Klausing, H ;

Mistele, D ;

Rotter, T ;

Semchinova, O ;

Stemmer, J ;

Graul, J .

JOURNAL OF CRYSTAL GROWTH, 2001, 222 (04) :701-705

[2] Raman spectroscopy of wurtzite InN films grown on Si [J].

Agulló-Rueda, F ;

Mendez, EE ;

Bojarczuk, B ;

Guha, S .

SOLID STATE COMMUNICATIONS, 2000, 115 (01) :19-21

[3] Shortest wavelength semiconductor laser diode [J].

Akasaki, I ;

Sota, S ;

Sakai, H ;

Tanaka, T ;

Koike, M ;

Amano, H .

ELECTRONICS LETTERS, 1996, 32 (12) :1105-1106

[4] INFRARED LATTICE VIBRATIONS AND DIELECTRIC DISPERSION IN CORUNDUM [J].

BARKER, AS .

PHYSICAL REVIEW, 1963, 132 (04) :1474-+

[5] Ab initio phonon dispersions of wurtzite AlN, GaN, and InN [J].

Bungaro, C ;

Rapcewicz, K ;

Bernholc, J .

PHYSICAL REVIEW B, 2000, 61 (10) :6720-6725

[6] Experimental and theoretical studies of phonons in hexagonal InN [J].

Davydov, VY ;

Emtsev, VV ;

Goncharuk, IN ;

Smirnov, AN ;

Petrikov, VD ;

Mamutin, VV ;

Vekshin, VA ;

Ivanov, SV ;

Smirnov, MB ;

Inushima, T .

APPLIED PHYSICS LETTERS, 1999, 75 (21) :3297-3299

[7] Fabrication and structural studies of opal-III nitride nanocomposites [J].

Davydov, VY ;

Golubev, VG ;

Kartenko, NF ;

Kurdyukov, DA ;

Pevtsov, AB ;

Sharenkova, NV ;

Brogueira, P ;

Schwarz, R .

NANOTECHNOLOGY, 2000, 11 (04) :291-294

[8] Identification of Raman-active phonon modes in oriented platelets of InN and polycrystalline InN [J].

Dyck, JS ;

Kim, K ;

Limpijumnong, S ;

Lambrecht, WRL ;

Kash, K ;

Angus, JC .

SOLID STATE COMMUNICATIONS, 2000, 114 (07) :355-360

[9] STRUCTURAL-PROPERTIES OF INN FILMS GROWN ON SAPPHIRE SUBSTRATES BY MICROWAVE-EXCITED METALORGANIC VAPOR-PHASE EPITAXY [J].

GUO, QX ;

YAMAMURA, T ;

YOSHIDA, A ;

ITOH, N .

JOURNAL OF APPLIED PHYSICS, 1994, 75 (10) :4927-4932

[10] Deposition of InN thin films by radio frequency magnetron sputtering [J].

Guo, QX ;

Shingai, N ;

Nishio, M ;

Ogawa, H .

JOURNAL OF CRYSTAL GROWTH, 1998, 189 :466-470

← 1 2 3 4 →