Fabrication and structural studies of opal-III nitride nanocomposites

被引：25

作者：

Davydov, VY ^{[1
]}

Golubev, VG

Kartenko, NF

Kurdyukov, DA

Pevtsov, AB

Sharenkova, NV

Brogueira, P

Schwarz, R

机构：

[1] RAS, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

[2] Univ Tecn Lisboa, Dept Fiz, Inst Super Tecn, P-1096 Lisbon, Portugal

来源：

NANOTECHNOLOGY | 2000年 / 11卷 / 04期

关键词：

D O I：

10.1088/0957-4484/11/4/319

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In this paper, regular three-dimensional systems of GaN, InN and InGaN nanoclusters have been fabricated for the first time in a void sublattice of artificial opal. The opal consisted of 220 nm diameter close packed amorphous silica spheres and had a regular sublattice of voids accessible to filling by other substances. GaN, InN and InGaN were synthesized directly in the opal voids from precursors such as metal salts and nitrogen hydrides. The composites' structures have been characterized using x-ray diffraction, Raman spectroscopy, atomic force microscopy and optical measurements.

引用

页码：291 / 294

页数：4

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