Three-dimensional array of silicon nanoscale elements in artificial SiO2 opal host

被引：20

作者：

Bogomolov, VN

Feoktistov, NA

Golubev, VG

Hutchison, JL

Kurdyukov, DA

Pevtsov, AB ^{[1
]}

Schwarz, R

Sloan, J

Sorokin, LM

机构：

[1] RAS, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[2] Univ Oxford, Dept Mat, Oxford OX1 3PH, England

[3] Inst Super Tecn, Dept Fiz, P-1096 Lisbon, Portugal

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 2000年 / 266卷

关键词：

D O I：

10.1016/S0022-3093(99)00895-9

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Regular systems of silicon nanoclusters containing up to 10(14) cm(-3) elements have been fabricated in a sublattice of voids of artificial opal. Structural studies of samples by transmission electron microscopy (TEM), high resolution electron microscopy (HREM) and Raman measurements were carried out. The regular lattices of Pt-Si junctions were obtained and the current as a function of voltage properties were measured. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：1021 / 1024

页数：4

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