Raman scattering spectra and electrical conductivity of thin silicon films with a mixed amorphous-nanocrystalline phase composition: Determination of the nanocrystalline volume fraction

被引：43

作者：

Golubev, VG

Davydov, VY

Medvedev, AV

Pevtsov, AB

Feoktistov, NA

机构：

[1] A. F. Ioffe Physicotechnical Inst., Russian Academy of Sciences

来源：

PHYSICS OF THE SOLID STATE | 1997年 / 39卷 / 08期

关键词：

D O I：

10.1134/1.1130042

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Raman spectra and electrical conductivity of thin films of hydrogenated silicon with mixed amorphous-nanocrystalline phase composition have been studied. It is shown that interpretation of experimental data in terms of percolation theory permits one to determine the integrated Raman-scattering cross-section ratio of the nanocrystalline to amorphous phase and to obtain a quantitative estimate of the volume fraction of each phase. (C) 1997 American Institute of Physics.

引用

页码：1197 / 1201

页数：5

共 19 条

[1]

BUNDE KA, 1987, PERCOLATION FRACTALS

[2] EXPERIMENTAL-DETERMINATION OF THE NANOCRYSTALLINE VOLUME FRACTION IN SILICON THIN-FILMS FROM RAMAN-SPECTROSCOPY [J].