Symmetry-dependence of electronic grain boundary properties in polycrystalline CuInSe2 thin films

被引：32

作者：

Baier, Robert ^{[1
]}

Abou-Ras, Daniel ^{[1
]}

Rissom, Thorsten ^{[1
]}

Lux-Steiner, Martha Ch ^{[1
]}

Sadewasser, Sascha ^{[1
]}

机构：

[1] Helmholtz Zentrum Berlin Mat & Energie, D-14109 Berlin, Germany

来源：

APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 17期

关键词：

MICROSCOPY;

D O I：

10.1063/1.3652915

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The symmetry-dependence of electronic grain boundary (GB) properties in polycrystalline CuInSe2 thin films was investigated in a combined study applying scanning electron microscopy, electron backscatter diffraction, and Kelvin probe force microscopy. We find that highly symmetric Sigma 3 GBs have a higher probability to be charge neutral than lower symmetric non-Sigma 3 GBs. This symmetry-dependence can help to explain the large variations of electronic properties found for GBs in Cu(In,Ga) Se-2. (C) 2011 American Institute of Physics. [doi:10.1063/1.3652915]

引用

页数：3

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