Grain Boundary Evaluation of Cu(In1-xGax)Se2 Solar Cells

被引：53

作者：

Kawamura, Masahiro ^{[1
]}

Yamada, Tomoyuki ^{[3
]}

Suyama, Naoki ^{[3
]}

Yamada, Akira ^{[1
,2
]}

Konagai, Makoto ^{[1
,2
]}

机构：

[1] Tokyo Inst Technol, Dept Phys Elect, Meguro Ku, Tokyo 1528552, Japan

[2] Tokyo Inst Technol, Photovolta Res Ctr, Meguro Ku, Tokyo 1528552, Japan

[3] Fdn Promot Mat Sci & Technol Japan, Setagaya Ku, Tokyo 1570067, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2010年 / 49卷 / 06期

关键词：

CU(IN; GA)SE-2; THIN-FILMS; HIGH-EFFICIENCY;

D O I：

10.1143/JJAP.49.062301

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The grain boundary (GB) properties of polycrystalline Cu(In1-x,Ga-x)Se-2 (CIGS) have been characterized using electron beam-induced current (EBIC) measurements, electron backscatter diffraction (EBSD) patterns, and scanning spreading resistance microscopy (SSRM) measurements. The polished cross section of CIGS solar cells was evaluated by these three methods, and the surface EBIC image was obtained by scanning electron microscopy (SEM). A combination of the EBIC and EBSD techniques makes it possible to investigate the effect of the GBs on the minority carrier collection. Furthermore, the SSRM mapping enables the analysis of grain-by-grain carrier profiling by measuring the spreading resistance of CIGS solar cells. It was found from these results that the twin boundaries of CIGS grains do not contribute to carrier recombination. Furthermore, the brighter EBIC signals were observed at the GBs of CIGS, which showed that the produced electron-hole pairs easily separate from each other and that the minority carriers are repelled from the GBs. This remarkable property of the GBs is suitable for application of CIGS to solar cells. (C) 2010 The Japan Society of Applied Physics DOI: 10.1143/JJAP.49.062301

引用

页码：0623011 / 0623013

页数：3

共 11 条

[1] Grain-size distributions and grain boundaries of chalcopyrite-type thin films [J].

Abou-Ras, D. ;

Schorr, S. ;

Schock, H. W. .

JOURNAL OF APPLIED CRYSTALLOGRAPHY, 2007, 40 :841-848

[2] EVALUATION OF DIFFUSION LENGTHS AND SURFACE RECOMBINATION VELOCITIES FROM ELECTRON-BEAM INDUCED CURRENT SCANS [J].

DONOLATO, C .

APPLIED PHYSICS LETTERS, 1983, 43 (01) :120-122

[3] HIGH-EFFICIENCY CUINXGA1-XSE2 SOLAR-CELLS MADE FROM (INX,GA1-X)2SE3 PRECURSOR FILMS [J].

GABOR, AM ;

TUTTLE, JR ;

ALBIN, DS ;

CONTRERAS, MA ;

NOUFI, R ;

HERMANN, AM .

APPLIED PHYSICS LETTERS, 1994, 65 (02) :198-200

[4] Texture and electronic activity of grain boundaries in Cu(In,Ga)Se2 thin films [J].

Hanna, G ;

Glatzel, T ;

Sadewasser, S ;

Ott, N ;

Strunk, HP ;

Rau, U ;

Werner, JH .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2006, 82 (01) :1-7

[5] Direct observation of copper depletion and potential changes at copper indium gallium diselenide grain boundaries [J].

Hetzer, MJ ;

Strzhemechny, YM ;

Gao, M ;

Contreras, MA ;

Zunger, A ;

Brillson, LJ .

APPLIED PHYSICS LETTERS, 2005, 86 (16) :1-3

[6] High quality baseline for high efficiency, Cu(In1-x,Gax)Se2 solar cells [J].

Jackson, Philip ;

Wuerz, Roland ;

Rau, Uwe ;

Mattheis, Julian ;

Kurth, Matthias ;

Schloetzer, Thomas ;

Bilger, Gerhard ;

Werner, Juergen H. .

PROGRESS IN PHOTOVOLTAICS, 2007, 15 (06) :507-519

[7] Local built-in potential on grain boundary of Cu(In,Ga)Se2 thin films [J].

Jiang, CS ;

Noufi, R ;

AbuShama, JA ;

Ramanathan, K ;

Moutinho, HR ;

Pankow, J ;

Al-Jassim, MM .

APPLIED PHYSICS LETTERS, 2004, 84 (18) :3477-3479

[8] Cu(In,Ga)Se2 thin-film solar cells grown with cracked selenium [J].

Kawamura, Masahiro ;

Fujita, Toshiyuki ;

Yamada, Akira ;

Konagai, Makoto .

JOURNAL OF CRYSTAL GROWTH, 2009, 311 (03) :753-756

[9] Electrical activity at grain boundaries of Cu(In,Ga)Se2 thin films -: art. no. 033306 [J].

Marrón, DF ;

Sadewasser, S ;

Meeder, A ;

Glatzel, T ;

Lux-Steiner, MC .

PHYSICAL REVIEW B, 2005, 71 (03)

[10] Influence of grain boundaries on current collection in Cu(In,Ga)Se2 thin-film solar cells [J].

Nichterwitz, M. ;

Abou-Ras, D. ;

Sakurai, K. ;

Bundesmann, J. ;

Unold, T. ;

Scheer, R. ;

Schock, H. W. .

THIN SOLID FILMS, 2009, 517 (07) :2554-2557

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