Spin-dependent tunneling through layered ferromagnetic nanoparticles

被引：23

作者：

Inomata, K ^{[1
]}

Saito, Y ^{[1
]}

机构：

[1] Toshiba Co Ltd, Adv Res Lab, Saiwai Ku, Kawasaki, Kanagawa 210, Japan

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 08期

关键词：

D O I：

10.1063/1.122110

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Spin-dependent tunneling has been investigated for nanostructured ferromagnetic tunnel junctions, in which an insulating nanostructured film made of layered hard ferromagnetic Co80Pt20 nanoparticles dispersed in an insulating SiO2 matrix is sandwiched between two soft ferromagnetic electrodes, an Fe/Co80Pt20 as a bottom electrode and a Co9Fe as a top electrode. The junctions investigated have three tunnel barriers and exhibited tunnel magnetoresistance of 9% at room temperature with a small resistance at a low field. The charging energy of the particles with an average diameter of 7 nm was estimated to be 45 meV from the temperature dependence of the resistance. Coulomb blockade was not observed for the junctions because of the low junction resistance. (C) 1998 American Institute of Physics. [S0003-6951(98)03834-0]

引用

页码：1143 / 1145

页数：3

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