Spin-dependent tunneling between a soft ferromagnetic layer and hard magnetic nanosize particles

被引：16

作者：

Inomata, K ^{[1
]}

Ogiwara, H ^{[1
]}

Saito, Y ^{[1
]}

Yusu, K ^{[1
]}

Ichihara, K ^{[1
]}

机构：

[1] TOSHIBA CO LTD, MAT & DEVICES LAB, SAIWAI KU, KAWASAKI, KANAGAWA 210, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1997年 / 36卷 / 10B期

关键词：

ferromagnetic; tunnel; junction; granular; hard magnetic; MR;

D O I：

10.1143/JJAP.36.L1380

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Spin-dependent tunneling has been investigated for ferromagnetic tunnel junctions with a new structure, which consists of a hard ferromagnetic insulating granular thin film sandwiched between two soft ferromagnetic layers; or soft ferromagnetic and non-ferromagnetic layers. The granular film, consisting of ferromagnetic Co80Pt20 nanosize particles embedded in a SiO2 matrix with 13 nm thickness, has a high coercive force. The Blm was prepared by co-sputtering of Co80Pt20 and SiO2 targets on a glass substrate with a Cr or a Co80Pt20/Fe underlayer as a bottom electrode. A ferromagnetic Co9Fe layer as a top electrode was deposited over the granular film to form cross pattern junctions of 0.01 mm(2) junction area through a metal mask. The tunneling magnetoresistance up to 4.5% at RT was observed for a Co9Fe/Co80Pt20-SiO2/Co80Pt20/Fe junction at a low field.

引用

页码：L1380 / L1383

页数：4

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