Buckling cascade of free-standing mesoscopic beams

被引:15
作者
Carr, SM [1 ]
Lawrence, WE [1 ]
Wybourne, MN [1 ]
机构
[1] Dartmouth Coll, Dept Phys & Astron, Hanover, NH 03755 USA
来源
EUROPHYSICS LETTERS | 2005年 / 69卷 / 06期
关键词
D O I
10.1209/epl/i2004-10442-8
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We have observed a striking change in the static equilibrium shape of freestanding mesoscopic buckled beams as a function of the length-to-width aspect ratio. At low values of the aspect ratio the shape is well described by classical Euler buckling. At higher values the buckled shapes become more complex and are well described by a superposition of buckling modes. The data are consistent with a mode-coefficient sum rule obtained from a nonlinear elastic field theory. Further, for beams of low aspect ratio the theory can predict the equilibrium shape of the buckling, while at high aspect ratios the lower bound on the buckling shape function is obtained.
引用
收藏
页码:952 / 958
页数:7
相关论文
共 18 条
[1]  
BALK P, 1988, SI SIO2 SYSTEM, P129
[2]  
CARR S, UNPUB IEEE T NANOTEC
[3]   Elastic instability of nanomechanical beams [J].
Carr, SM ;
Wybourne, MN .
APPLIED PHYSICS LETTERS, 2003, 82 (05) :709-711
[4]   Accessibility of quantum effects in mesomechanical systems [J].
Carr, SM ;
Lawrence, WE ;
Wybourne, MN .
PHYSICAL REVIEW B, 2001, 64 (22)
[5]  
EULER L, 1774, ELASTIC CURVES
[6]   POST BUCKLING OF MICROMACHINED BEAMS [J].
FANG, W ;
WICKERT, JA .
JOURNAL OF MICROMECHANICS AND MICROENGINEERING, 1994, 4 (03) :116-122
[7]   On the buckling behavior of micromachined beams [J].
Fang, WL ;
Lee, CH ;
Hu, HH .
JOURNAL OF MICROMECHANICS AND MICROENGINEERING, 1999, 9 (03) :236-244
[8]   Assembly of nanodevices with carbon nanotubes through nanorobotic manipulations [J].
Fukuda, T ;
Arai, F ;
Dong, LX .
PROCEEDINGS OF THE IEEE, 2003, 91 (11) :1803-1818
[9]   STRESS-RELATED PROBLEMS IN SILICON TECHNOLOGY [J].
HU, SM .
JOURNAL OF APPLIED PHYSICS, 1991, 70 (06) :R53-R80
[10]   Direct observation of Si lattice strain and its distribution in the Si(001)-SiO2 interface transition layer [J].
Kim, YP ;
Choi, SK ;
Kim, HK ;
Moon, DW .
APPLIED PHYSICS LETTERS, 1997, 71 (24) :3504-3506