POST BUCKLING OF MICROMACHINED BEAMS

被引:171
作者
FANG, W
WICKERT, JA
机构
[1] Department of Mechanical Engineering, Camegie Mellon University, Pittsburgh, PA
关键词
D O I
10.1088/0960-1317/4/3/004
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The static deformation of micromachined beams under prescribed in-plane compressive stress is studied through analytical and experimental means over the prebuckling, transition and postbuckling load ranges. The finite amplitude of the beam in its postbuckled state is predicted by modeling the non-linear dependence of the out-of-plane deformation on the compressive stress. In addition, the model explicitly considers the net effect of slight imperfections, which can include fabrication defects, geometric irregularities, or non-ideal loading, on the beam's behavior in the near-buckling regime. As an application, clamped-clamped silicon dioxide beams are fabricated through conventional bulk micromachining, and their deflected profiles are measured through three-dimensional optical profilometry. The measurements are compared to the postbuckled amplitudes and shapes that are predicted by the model, and by existing simpler models that do not include the effects of either non-linearity or imperfection. As borne out by the data, when imperfections are considered, the beams exhibit continuous growth of the out-of-plane amplitude during transition from the prebuckled state to a postbuckled one, in contrast to sudden bifurcation at a critical load. By accounting for this behavior, the estimate of residual stress in the thin film from which the beams are fabricated can be improved, and the amplitude of common postbuckled micromachined structures can be predicted during the design phase.
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收藏
页码:116 / 122
页数:7
相关论文
共 19 条
[1]   THERMALLY EXCITED RESONATING MEMBRANE MASS-FLOW SENSOR [J].
BOUWSTRA, S ;
KEMNA, P ;
LEGTENBERG, R .
SENSORS AND ACTUATORS, 1989, 20 (03) :213-223
[2]  
Cullity BD., 1972, INTRO MAGNETIC MAT
[3]  
DYM CL, 1974, STABILITY THEORY ITS
[4]  
Guckel H., 1992, Journal of Micromechanics and Microengineering, V2, P86, DOI 10.1088/0960-1317/2/2/004
[5]   A SIMPLE TECHNIQUE FOR THE DETERMINATION OF MECHANICAL STRAIN IN THIN-FILMS WITH APPLICATIONS TO POLYSILICON [J].
GUCKEL, H ;
RANDAZZO, T ;
BURNS, DW .
JOURNAL OF APPLIED PHYSICS, 1985, 57 (05) :1671-1675
[6]   POLYCRYSTALLINE SILICON MICROMECHANICAL BEAMS [J].
HOWE, RT ;
MULLER, RS .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (06) :1420-1423
[7]  
HUTCHINSON JW, 1970, APPL MECH REV, V0023, P01353
[8]   MEASUREMENT OF STRAINS AT SI-SIO2 INTERFACE [J].
JACCODINE, RJ ;
SCHLEGEL, WA .
JOURNAL OF APPLIED PHYSICS, 1966, 37 (06) :2429-+
[9]  
Kern W, 1978, THIN FILM PROCESSES
[10]   LOCAL STRESS MEASUREMENT IN THIN THERMAL SIO2 FILMS ON SI-SUBSTRATES [J].
LIN, SCH ;
PUGACZMU.I .
JOURNAL OF APPLIED PHYSICS, 1972, 43 (01) :119-&