LOCAL STRESS MEASUREMENT IN THIN THERMAL SIO2 FILMS ON SI-SUBSTRATES

[1] ABRAMOWITZ M, 1965, HDB MATHEMATICAL FUN

[2] BULTHUIS K, 1965, PHILIPS RES REP, V20, P415

[3] MEASUREMENT OF STRAINS AT SI-SIO2 INTERFACE [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (06) : 2429 - +

[4] KOHLRAUSCH F, 1956, PRACTISCHE PHYSIK, V2

[5] RESISTANCE OF ELASTICALLY DEFORMED SHALLOW P-N JUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (08) : 2479 - +

[6] Scheuerman R. J., 1969, Thin film dielectrics, P561

[7] The tension of metallic films deposited by electrolysis [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-CONTAINING PAPERS OF A MATHEMATICAL AND PHYSICAL CHARACTER, 1909, 82 (553) : 172 - 175

[8] TIMOSHENKO S, 1955, STRENGTH MATERIALS

[9] RESIDUAL STRESSES AT AN OXIDE-SILICON INTERFACE [J]. APPLIED PHYSICS LETTERS, 1967, 10 (10) : 262 - &

[10] EFFECT OF MECHANICAL STRESS ON P-N JUNCTION DEVICE CHARACTERISTICS [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (07) : 2122 - &

[1] ABRAMOWITZ M, 1965, HDB MATHEMATICAL FUN

[2] BULTHUIS K, 1965, PHILIPS RES REP, V20, P415

[3] MEASUREMENT OF STRAINS AT SI-SIO2 INTERFACE [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (06) : 2429 - +

[4] KOHLRAUSCH F, 1956, PRACTISCHE PHYSIK, V2

[5] RESISTANCE OF ELASTICALLY DEFORMED SHALLOW P-N JUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (08) : 2479 - +

[6] Scheuerman R. J., 1969, Thin film dielectrics, P561

[7] The tension of metallic films deposited by electrolysis [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-CONTAINING PAPERS OF A MATHEMATICAL AND PHYSICAL CHARACTER, 1909, 82 (553) : 172 - 175

[8] TIMOSHENKO S, 1955, STRENGTH MATERIALS

[9] RESIDUAL STRESSES AT AN OXIDE-SILICON INTERFACE [J]. APPLIED PHYSICS LETTERS, 1967, 10 (10) : 262 - &

[10] EFFECT OF MECHANICAL STRESS ON P-N JUNCTION DEVICE CHARACTERISTICS [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (07) : 2122 - &