RESISTANCE OF ELASTICALLY DEFORMED SHALLOW P-N JUNCTIONS

被引：58

作者：

RINDNER, W

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1962年 / 33卷 / 08期

关键词：

D O I：

10.1063/1.1728998

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：2479 / +

页数：1

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[1] A NEW DEVICE USING THE TUNNELING PROCESS IN NARROW P-N JUNCTIONS
ESAKI, L
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[J]. SOLID-STATE ELECTRONICS, 1960, 1 (01) : 13 - &
[2] THE EFFECTS OF PRESSURE AND TEMPERATURE ON THE RESISTANCE OF P-N JUNCTIONS IN GERMANIUM
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[3] PRESSURE DEPENDENCE OF THE CURRENT-VOLTAGE CHARACTERISTICS OF ESAKI DIODES
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[J]. PHYSICAL REVIEW LETTERS, 1960, 4 (02) : 60 - 62
[4] CURRENT-VOLTAGE CHARACTERISTICS OF PLASTICALLY DEFORMED GERMANIUM P-N JUNCTIONS
RYUZAN, O
[J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1961, 16 (11) : 2177 - &
[5] PIEZORESISTANCE EFFECT IN GERMANIUM AND SILICON
SMITH, CS
[J]. PHYSICAL REVIEW, 1954, 94 (01): : 42 - 49